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Infineon: World's first high-volume production facility for gallium nitride power semiconductors on 300-millimeter wafers built in Europe - Silicon Saxony

October 27, 2026. Infineon Technologies AG is building the world's first high-volume production facility for the latest generation of gallium nitride (GaN) power semiconductors on 300-millimeter wafers. As part of the project, Infineon is investing approximately €1.1 billion in existing cleanroom space at its Villach site by 2034. The simultaneous use of existing and modernized infrastructure enables a particularly efficient and cost-effective expansion of production capacity. Production is scheduled to start at the end of 2027. With this investment, Infineon is addressing the rapidly growing demand for high-performance power supply solutions. Gallium nitride enables significant efficiency gains in numerous applications such as AI data centers, energy infrastructure, electromobility, robotics, and consumer electronics.

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NXP: Volkswagen Group strengthens its strategic semiconductor ecosystem through partnership with NXP - Silicon Saxony

October 26, 2026. The Volkswagen Group and NXP Semiconductors announced today, ahead of the International Automotive Suppliers Fair (IZB) in Wolfsburg, that they have agreed on a strategic partnership. NXP's S32K5 family of microcontrollers (MCUs) will serve as a key component of the Volkswagen Group's future software-defined vehicle (SDV) architecture and will support zonal control across all brands and vehicle segments. The first vehicle with the new architecture is planned for 2027.

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Technology: Infineon invests more than one billion euros in Austria

The DAX-listed company is building a new production line for energy-saving chips made from the innovative material gallium nitride. The subsidies are substantial.

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aCCCess has received funding from the European Union’s Digital Europe Chips JU under Grant Agreement No 101217840.

Funded by the European Union. Views and opinions expressed are however those of the author(s) only and do not necessarily reflect those of the European Union or [name of the granting authority]. Neither the European Union nor the granting authority can be held responsible for them.