Capacitor-less IGZO DRAM: a promising technology for 3D DRAM and eDRAM
Technology review
As artificial intelligence becomes increasingly integrated into our daily lives, the demand for AI capabilities on edge devices is expected to rise dramatically. In addition to local processing power, this also requires high-speed and high-density storage solutions such as embedded DRAM (eDRAM). The advancement of back-end-of-line (BEOL)-compatible eDRAM is therefore one of the goals of the NanoIC pilot line.
As an underlying technology for eDRAM, capacitor-less IGZO is a promising candidate. Some of its advantages include:
Read this article to find out more about capacitor-less IGZO-DRAM technology: how it works, what it benefits are, what has already been achieved, and where the remaining challenges lie.
aCCCess has received funding from the European Union’s Digital Europe Chips JU under Grant Agreement No 101217840.
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